APT10M19BVFR Datasheet | Advanced Power Technology

100V 75A 0.019Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. - Fast Recovery Body Diode - Lower Leakage - Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage - 100% Avalanche Tested FREDFET - Popular TO-247 Package All Ratings: TC = 25°C unless otherwise specified. APT10M19BVFR UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 75 300 ±30 ±40 370 2.96 -55 to 150 300 75 30 1500 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 5 Volts Watts W/°C °C Amps m J (Repetitive and Non-Repetitive) 1 4 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 5 UNIT Volts Amps 100 75 0.019 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5...