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APT11GP60SA - POWER MOS 7 IGBT

This page provides the datasheet information for the APT11GP60SA, a member of the APT11GP60K POWER MOS 7 IGBT family.

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Datasheet Details

Part number APT11GP60SA
Manufacturer Advanced Power Technology
File Size 192.03 KB
Description POWER MOS 7 IGBT
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TYPICAL PERFORMANCE CURVES APT11GP60K_SA APT11GP60K APT11GP60SA www.DataSheet4U.com 600V POWER MOS 7 IGBT ® (K) TO-220 (SA) D2PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. C G E G • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • SSOA rated C E C G E All Ratings: TC = 25°C unless otherwise specified.
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