The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
APT20M11JVR
200V 175A 0.011Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
S G D
S
SO
ISOTOP ®
2 T-
27
"UL Recognized"
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Popular SOT-227 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT20M11JVR UNIT Volts Amps
200 175 700 ±30 ±40 700 5.
APT20M11JVR Datasheet
