APT20M22B2VR Datasheet | Advanced Power Technology

200V 100A 0.022Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ - Faster Switching - Lower Leakage - 100% Avalanche Tested - New T-MAX™ Package (Clip-mounted TO-247 Package) MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 6 6 All Ratings: TC = 25°C unless otherwise specified. APT20M22B2VR UNIT Volts...