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APT20M26WVR
200V 65A 0.026Ω
POWER MOS V ®
TO-267
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
V®
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • New TO-267 Package
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D
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MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1 5 5
All Ratings: TC = 25°C unless otherwise specified.
APT20M26WVR UNIT Volts Amps
200 65 260 ±30 ±40 450 3.
APT20M26WVR Datasheet
