APT20M38BVFR Datasheet | Advanced Power Technology

200V 67A 0.038Ω APT20M38BVFR APT20M38SVFR APT20M38BVFRG- APT20M38SVFRG- - G Denotes Ro HS pliant, Pb Free Terminal Finish. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. BVFR TO-247 D3PAK SVFR - Lower Leakage - Avalanche Energy Rated - Faster Switching - Fast Recovery Body Diode - TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT20M38B_SVFR(G) 200 67 268 ±30 ±40 370 2.96 -55 to 150 300 67 30 1300 UNIT Volts Amps Volts Watts W/°C °C Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS ID(on)...