Advanced Power Technology APT20N60BC3
Super Junction MOSFET
| Part No. | APT20N60BC3 |
|---|---|
| Datasheet | APT20N60BC3 Download |
| Manufacturer |  Advanced Power Technology |
| Description | Super Junction MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C unless otherwise specified. APT20N60BC3_SC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 600 20.7 62 ±20 ±30 208 1.67 -55 to 150 260 50 20 1 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 20.7A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 690 STATICELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.16 0.05 0.19 25 250 ±100 2.1 3 3.9 (VGS = 10V, ID = 13.1A...
