APT25GP90B Datasheet | Advanced Power Technology

.. TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT ® TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ® - Low Conduction Loss - Low Gate Charge - Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient - 100 k Hz operation @ 600V, 21A - 50 k Hz operation @ 600V, 33A - SSOA Rated All Ratings: TC = 25°C unless otherwise specified. APT25GP90B UNIT 900 ±20 ±30 72 36 110 110A @ 900V 417 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1m A, Tj = 25°C) MIN TYP MAX UNIT 900 3 4.5 3.2 2.7 250 µA n A 7-2004 050-7477 Rev D 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 2 Volts I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 1000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be...