Full PDF Text Transcription for APT30GP60B (Reference)
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APT30GP60B. For precise diagrams, and layout, please refer to the original PDF.
APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized f...
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echnology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power MOSFET. TO-247 ® G C C E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • 100 kHz operation @ 400V, 37A • 200 kHz operation @ 400V, 24A • SSOA rated G E
APT30GP60B Datasheet
