APT30M36LLL Datasheet | Advanced Power Technology

APT30M36B2LL APT30M36LLL 300V 84A 0.036Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering and Qg. Power MOS 7® bines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. - Lower Input Capacitance - Lower Miller Capacitance - Lower Gate Charge, Qg - Increased Power Dissipation - Easier To Drive - Popular T-MAX™ or TO-264 Package T-MAX™ TO-264 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT30M36B2LL_LLL 300 84 336 ±30 ±40 568 4.55 -55 to 150 300 84 50 2500 UNIT Volts Amps Volts Watts W/°C °C Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 42A) IDSS Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5m...