APT35GP120B2DF2
APT35GP120B2DF2 is Power MOS 7 IGBT manufactured by Advanced Power Technology.
1200V
POWER MOS 7 IGBT
T-MaxTM
®
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
- Low Conduction Loss
- Low Gate Charge
- Ultrafast Tail Current shutoff ..
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
- 100 kHz operation @ 800V, 14A
- 50 kHz operation @ 800V, 25A
- RBSOA rated
All Ratings: TC = 25°C unless otherwise...
