Datasheet4U Logo Datasheet4U.com

APT35GP120B2DF2 - Power MOS 7 IGBT

📥 Download Datasheet

Datasheet preview – APT35GP120B2DF2

Datasheet Details

Part number APT35GP120B2DF2
Manufacturer Advanced Power Technology
File Size 119.83 KB
Description Power MOS 7 IGBT
Datasheet download datasheet APT35GP120B2DF2 Datasheet
Additional preview pages of the APT35GP120B2DF2 datasheet.

📁 Similar Datasheet

  • APT35GA90B - High Speed PT IGBT (Microsemi Corporation)
  • APT35GA90S - High Speed PT IGBT (Microsemi Corporation)
  • APT35GT120JU2 - ISOTOP Buck chopper Trench IGBT (Microsemi Corporation)
  • APT35GT120JU3 - ISOTOP Buck chopper Trench IGBT (Microsemi Corporation)
  • APT35DL120HJ - Power Module - Diode (Microsemi Corporation)
  • APT305 - 5 Sec Easy Use Speech (ChipSourceTek)
  • APT30D120B - Ultrafast Rectifier (INCHANGE)
  • APT30DC60HJ - SiC Diode Full Bridge Power Module (Microsemi)
  • APT30DF100HJ - Fast Diode Full Bridge Power Module (Microsemi)
  • APT30DF120HJ - Fast Diode Full Bridge Power Module (Microsemi)
Other Datasheets by Advanced Power Technology

Full PDF Text Transcription

Click to expand full text
APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff www.DataSheet4U.com MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • 100 kHz operation @ 800V, 14A • 50 kHz operation @ 800V, 25A • RBSOA rated E C G E All Ratings: TC = 25°C unless otherwise specified.
Published: |