APT4012BVFR Datasheet | Advanced Power Technology

APT4012BVFR APT4012SVFR 400V 37A BVFR 0.120Ω D3PAK POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. .. SVFR - Faster Switching - Lower Leakage - Avalanche Energy Rated - TO-247 or Surface Mount D3Pak - Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current All Ratings: TC = 25°C unless otherwise specified. APT4012BVFR_SVFR UNIT Volts Amps 400 37 148 ±30 ±40 370 2.96 -55 to 150 300 37 30 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Volts Watts W/°C °C Amps m J (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current UNIT Volts...