APT4014BVR Datasheet | Advanced Power Technology

400V 28A 0.140Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 - Faster Switching - Lower Leakage - 100% Avalanche Tested - Popular TO-247 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current All Ratings: TC = 25°C unless otherwise specified. APT4014BVR UNIT Volts Amps 400 28 112 ±30 ±40 300 2.4 -55 to...