Advanced Power Technology APT4020BVFRG
Power MOSFET
MAXIMUM RATINGS
● TO-247 or Surface Mount D3Pak G S All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT4020B_SVFR(G) 400 23 92 ±30 ±40 250 2 -55 to 150 300 23 30 960 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATICELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 400 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 23 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 11.5A) IDSS Zero Gate Voltage Dr...