Advanced Power Technology APT40M70B2LVFR
POWER MOS V FREDFET
| Part No. | APT40M70B2LVFR |
|---|---|
| Datasheet | APT40M70B2LVFR Download |
| Manufacturer |  Advanced Power Technology |
| Description | POWER MOS V FREDFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage● Avalanche Energy Rated
● FAST RECOVERY BODY DIODE G D S All Ratings: TC = 25°C unless otherwise specified. APT40M70B2_LVFR(G) UNIT Volts Amps 400 57 228 ±30 ±40 520 4.16 -55 to 150 300 57 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC
ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 57 0.070 250 1000 ±100 2 4 (VDS > ID(on) x R DS(on) Max, VG...
