Advanced Power Technology APT5010B2LL
Power MOSFET
| Part No. | APT5010B2LL |
|---|---|
| Datasheet | APT5010B2LL Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage T-MAX™ TO-264 LLL● Increased Power Dissipation
● Easier To Drive
● Popular T-MAX™ or TO-264 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT5010 UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T IO E T C MA N A OR V AD INF 46 184 ±30 ±40 500 4.0 300 46 50 (Repetitive and Non-Repetitive) 1 4 500 Volts Watts W/°C °C Amps mJ -55 to 150 1800 STATIC
ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TY...