APT5010JN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Advanced Power Technology

Datasheet Details

Part number	APT5010JN
Manufacturer	Advanced Power Technology
File Size	60.44 KB
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet	APT5010JN Datasheet

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D S G D S G S SO 2 T- 27 APT5010JN APT5012JN 500V 500V 48.0A 0.10Ω 43.0A 0.12Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 5010JN APT 5012JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 48 192 ± 30 520 4.16 500 43 172 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.