APT5010JN Datasheet | Advanced Power Technology

2 T- APT5010JN APT5012JN 500V 500V 48.0A 0.10Ω 43.0A 0.12Ω ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, l LM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 5010JN APT 5012JN UNIT Volts Amps - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 48 192 ± 30 520 4.16 500 43 172 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 and Inductive Current Clamped Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current MIN APT5010JN APT5012JN APT5010JN APT5012JN APT5010JN...