APT5012WVR Datasheet | Advanced Power Technology

500V 40A 0.120Ω POWER MOS V ® TO-267 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. V® - Faster Switching - Lower Leakage - 100% Avalanche Tested - New TO-267 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current All Ratings: TC = 25°C unless otherwise specified. APT5012WVR UNIT Volts Amps 500 40 160 ±30 ±40 450 3.6 -55 to 150...