APT5014BLL Datasheet | Advanced Power Technology

APT5014BLL APT5014SLL 500V 35A 0.140Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® bines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. TO-247 D3PAK - Lower Input Capacitance - Lower Miller Capacitance - Lower Gate Charge, Qg - Increased Power Dissipation - Easier To Drive - TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT5014BLL-SLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 500 35 140 ±30 ±40 403 3.22 Volts Amps Volts Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 35 30 1300 °C Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, 17.5A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1m A) MIN TYP MAX UNIT 500...