APT5014LLC Datasheet | Advanced Power Technology

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. - Identical Specifications: T-MAX™ or TO-264 Package - Lower Gate Charge & Capacitance - Easier To Drive - 100% Avalanche Tested - Faster switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter T-MAX™ TO-264 All Ratings: TC = 25°C unless otherwise specified. APT5014 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I D T E A C M N R A O V F D A IN 500 37 148 ±30 ±40 450 3.6 -55 to 150 300 37 35 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps m J STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current UNIT Volts Amps 500 37 0.140 25 250 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS =...