APT5020SLC- Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
APT5020SVFR- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5020SVR- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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D
TO-247
G S
APT5020BN 500V
®
28.0A 0.20Ω 27.0A 0.22Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT5022BN 500V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT 5020BN APT 5022BN UNIT Volts Amps
500 28 112 ± 30 360 2.9
500 27 108
Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
APT5022BN Datasheet
