Advanced Power Technology APT5022BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
| Part No. | APT5022BN |
|---|---|
| Datasheet | APT5022BN Download |
| Manufacturer |  Advanced Power Technology |
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5022BN 500V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT 5020BN APT 5022BN UNIT Volts Amps 500 28 112 ± 30 360 2.9 500 27 108 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/°C °C -55 to 150 300 STATICELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN APT5020BN APT5022BN APT5020BN APT5022BN APT5020BN APT5022BN TYP MAX UNIT Volts 500 500 28 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 2 27 0.20 Ohm...
