Advanced Power Technology APT50M50JVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| Part No. | APT50M50JVFR |
|---|---|
| Datasheet | APT50M50JVFR Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage● 100% Avalanche Tested FREDFET D G S
● Popular SOT-227 Package All Ratings: TC = 25°C unless otherwise specified. APT50M50JVFR UNIT Volts Amps 500 77 308 ±30 ±40 700 5.6 -55 to 150 300 77 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC
ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 77 0.050 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, V...
