Advanced Power Technology APT50M75JLLU2
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
| Part No. | APT50M75JLLU2 |
|---|---|
| Datasheet | APT50M75JLLU2 Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage SO ISOTOP® 2 T- 27 "UL Recognized" D G S● Increased Power Dissipation
● Easier To Drive
● PFC "Boost" Configuration K All Ratings: TC = 25°C unless otherwise specified. APT50M75JLLU2 UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T A C N RM A V FO D A IN (Repetitive and Non-Repetitive) 1 4 500 51 204 ±30 ±40 465 Volts Watts W/°C °C Amps mJ 3.72 300 51 50 -55 to 150 2500 STATIC
ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State...
