APT50M80B2LC - Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

Advanced Power Technology

APT50M80B2LC Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. by Advanced Power Technology - Datasheet Preview — Datasheet preview – APT50M80B2LC

Datasheet Details

Part number	APT50M80B2LC
Manufacturer	Advanced Power Technology
File Size	36.23 KB
Description	Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
Datasheet	APT50M80B2LC Datasheet
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APT50M80B2LC APT50M80LLC 500V 58A 0.080W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. • Identical Specifications: T-MAX™ or TO-264 Package • Lower Gate Charge & Capacitance • Easier To Drive • 100% Avalanche Tested • Faster switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter B2LC T-MAX™ TO-264 LLC D G S All Ratings: TC = 25°C unless otherwise specified.

Published: Apr 23, 2005 |