Advanced Power Technology APT6010JFLL
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
| Part No. | APT6010JFLL |
|---|---|
| Datasheet | APT6010JFLL Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SO ISOTOP ® 2 T- 27 "UL Recognized"● Increased Power Dissipation
● Easier To Drive
● Popular SOT-227 Package
● FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT6010JFLL UNIT Volts Amps 600 47 188 ±30 ±40 520 4.16 -55 to 150 300 47 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC
ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 MIN TYP MAX...