APT6011B2VFR
600V 49A 0.110W
POWER MOS V ®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
- Fast Recovery Body Diode
- Lower Leakage
- Popular T-MAX™ Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter
- 100% Avalanche Tested
- Faster Switching
All Ratings: TC = 25°C unless otherwise specified.
APT6011B2VFR UNIT Volts Amps
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche...
