APT6011B2VFR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Advanced Power Technology

Datasheet Details

Part number	APT6011B2VFR
Manufacturer	Advanced Power Technology
File Size	34.75 KB
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Datasheet	APT6011B2VFR Datasheet

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Other Datasheets by Advanced Power Technology

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APT6011B2VFR 600V 49A 0.110W POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Popular T-MAX™ Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter • 100% Avalanche Tested • Faster Switching G D S All Ratings: TC = 25°C unless otherwise specified.