APT6013JVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Advanced Power Technology

Datasheet Details

Part number	APT6013JVR
Manufacturer	Advanced Power Technology
File Size	71.02 KB
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Datasheet	APT6013JVR Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
APT6013B2FLL	N-Channel MOSFET	INCHANGE
APT6013B2LL	N-Channel MOSFET	INCHANGE
APT6013LFLL	N-Channel MOSFET	INCHANGE
APT6010B2FLL	Power MOSFET	Microsemi
APT6010B2FLL	N-Channel MOSFET	INCHANGE

Other Datasheets by Advanced Power Technology

Part Number	Description
APT6013JFLL	Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
APT6013JLL	Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
APT6013B2FLL	Power MOSFET
APT6013B2LL	Power MOSFET
APT6013LFLL	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

APT6013JVR 600V 40A 0.130Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SO ISOTOP ® 2 T- 27 "UL Recognized" • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular SOT-227 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.