APT6013JVR Datasheet | Advanced Power Technology

600V 40A 0.130Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. ISOTOP ® 2 T- "UL Recognized" - Faster Switching - Lower Leakage - 100% Avalanche Tested - Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current All Ratings: TC = 25°C unless otherwise specified. APT6013JVR UNIT Volts Amps 600 40 160 ±30 ±40 500 4 -55 to 150 300 30 30 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Volts...