Datasheet4U Logo Datasheet4U.com

APT6045SVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

📥 Download Datasheet

Datasheet preview – APT6045SVR

Datasheet Details

Part number APT6045SVR
Manufacturer Advanced Power Technology
File Size 65.77 KB
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Datasheet download datasheet APT6045SVR Datasheet
Additional preview pages of the APT6045SVR datasheet.

📁 Similar Datasheet

Other Datasheets by Advanced Power Technology
  • APT6045BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • APT6045BVR - Power MOSFET
  • APT6045CVR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
  • APT6040BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
  • APT6041CLL - Power MOSFET
  • APT6010B2LL - Power MOSFET
  • APT6010JFLL - Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
  • APT6010JLL - Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

Full PDF Text Transcription

Click to expand full text
APT6045SVR 600V 15A 0.450Ω POWER MOS V ® D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. V® • Faster Switching • Lower Leakage • 100% Avalanche Tested • Surface Mount D3PAK Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
Published: |