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TYPICAL PERFORMANCE CURVES
APT60GU30B APT60GU30S
®
APT60GU30B_S
300V
POWER MOS 7 IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
TO-247
D3PAK
C G E
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @
• SSOA rated
G
C
E
C G E
All Ratings: TC = 25°C unless otherwise specified.