Advanced Power Technology APT60M75L2LL
Power MOS 7 MOSFET
| Part No. | APT60M75L2LL |
|---|---|
| Datasheet | APT60M75L2LL Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power MOS 7 MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT60M75L2LL UNIT VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 600 73 292 ±30 ±40 893 7.14 -55 to 150 300 73 50 3200 Volts Amps Volts Watts W/°C °C Amps mJ STATICELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 36.5A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, T...
