APT60M90JN is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Advanced Power Technology.
| Part Number | Description |
|---|---|
| APT60M60JFLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| APT60M60JLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS |
| APT60M75JFLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| APT60M75JLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| APT60M75JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
D S G D S G S SO 2 T- 27 APT60M90JN 600V 57A 0.090Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor 1 SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified.
