APT75GN120B2G Datasheet | Advanced Power Technology

TYPICAL PERFORMANCE CURVES ® 1200V APT75GN120B2_L(G) APT75GN120B2 APT75GN120L APT75GN120B2G- APT75GN120LG- - G Denotes Ro HS pliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. (B2) T-Max® TO-264 (L) - 1200V Field Stop - Trench Gate: Low VCE(on) - Easy Paralleling - Intergrated Gate Resistor: Low EMI, High Reliability Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE .. All Ratings: TC = 25°C unless otherwise specified. APT75GN120B2_L(G) UNIT Volts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 1200 ±30 @ TC = 25°C I C1 I C2 I CM SSOA PD TJ,TSTG TL 200 99 225 225A @ 1200V 833 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3m A) Gate Threshold Voltage (VCE = VGE, I C = 3m A, Tj = 25°C) MIN TYP MAX Units 1200 5.0 1.4 2 2 5.8 1.7 2.0 6.5 2.1 100 TBD 600 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES RG(int) Gate-Emitter Leakage Current (VGE...