APT75GT120JR Datasheet | Advanced Power Technology

TYPICAL PERFORMANCE CURVES ® APT75GT120JR 1200V Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. - Low Forward Voltage Drop - Low Tail Current - RBSOA and SCSOA Rated - High Freq. Switching to 20KHz - Ultra Low Leakage Current ISOTOP ® "UL Recognized" file # E145592 MAXIMUM RATINGS Symbol VCES VGE .. All Ratings: TC = 25°C unless otherwise specified. APT75GT120JR UNIT Volts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1200 ±30 97 42 225 225A @ 1200V 481 -55 to 150 300 I C1 I C2 I CM SSOA PD TJ,TSTG TL Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4m A) Gate Threshold Voltage (VCE = VGE, I C = 3m A, Tj = 25°C) MIN TYP MAX Units 1200 4.5 2.7 2 2 5.5 3.2 3.9 6.5 3.7 25 TBD 480 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES RG(int) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor n A Ω CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://.advancedpower. 052-6275...