APT77N60JC3 Datasheet | Advanced Power Technology

600V 77A 0.035Ω Super Junction MOSFET C O OLMOS Power Semiconductors 2 T- - Ultra low RDS(ON) - Low Miller Capacitance - Ultra Low Gate Charge, Qg - Avalanche Energy Rated - N-Channel Enhancement Mode - Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS .. "UL Recognized" ISOTOP ® All Ratings: TC = 25°C unless otherwise specified. APT77N60JC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 600 77 231 ±20 ±30 568 4.55 -55 to 150 300 50 20 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 77A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 VGSM PD TJ,TSTG TL dv/ dt Volts Watts W/°C °C V/ns Amps m J IAR EAR EAS Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance UNIT Volts 600 .030 1.0 0.035 50 500 ±200 2.1 3 3.9 (VGS = 10V, ID =...