Advanced Power Technology APT8011JLL
Power MOSFET
| Part No. | APT8011JLL |
|---|---|
| Datasheet | APT8011JLL Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage S G D S SO ISOTOP ® 2 T- 27 "UL Recognized"● Increased Power Dissipation
● Easier To Drive
● Popular SOT-227 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT8011JLL UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T C MA N A OR V AD INF 800 51 204 ±30 ±40 690 5.52 300 51 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 3600 STATIC
ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State...