Full PDF Text Transcription for APT8056BVR (Reference)
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APT8056BVR. For precise diagrams, and layout, please refer to the original PDF.
APT8056BVR 800V 16A 0.560Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET...
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enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-247 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT8056BVR UNIT Volts Amps 800 16 64 ±30 ±40 370 2.
APT8056BVR Datasheet
