Full PDF Text Transcription for APT8065BVFR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APT8065BVFR. For precise diagrams, and layout, please refer to the original PDF.
APT8065BVFR 800V 13A 0.650Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology mi...
View more extracted text
ltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested FREDFET D G S • Popular TO-247 Package All Ratings: TC = 25°C unless otherwise specified. APT8065BVFR UNIT Volts Amps 800 13 52 ±30 ±40 280 2.
APT8065BVFR Datasheet
