APT8065BVFR Datasheet | Advanced Power Technology

800V 13A 0.650Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. - Fast Recovery Body Diode - Lower Leakage - Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage - 100% Avalanche Tested FREDFET - Popular TO-247 Package All Ratings: TC = 25°C unless otherwise specified. APT8065BVFR UNIT Volts Amps 800 13 52 ±30 ±40 280 2.24 -55 to 150 300 13 30 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche...