APT8075BVFR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Advanced Power Technology

Datasheet Details

Part number	APT8075BVFR
Manufacturer	Advanced Power Technology
File Size	72.84 KB
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Datasheet	APT8075BVFR Datasheet
Additional preview pages of the APT8075BVFR datasheet.

📁 Similar Datasheet

APT8075BVR - N-Channel MOSFET (INCHANGE)
APT8075BVR - N-Channel 800V Power MOSFET (VBsemi)
APT8043BFLL - N-Channel MOSFET (INCHANGE)
APT8043BLL - N-Channel MOSFET (INCHANGE)
APT8052BFLL - N-Channel MOSFET (INCHANGE)
APT8052BLL - N-Channel MOSFET (INCHANGE)
APT8056BVR - N-Channel MOSFET (INCHANGE)
APT8065BVFR - N-Channel MOSFET (INCHANGE)
APT8065BVR - N-Channel MOSFET (INCHANGE)
APT8065BVR - N-Channel 800V Power MOSFET (VBsemi)

Other Datasheets by Advanced Power Technology

APT8075BVR - Power MOSFET
APT8075BN - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT8011JFLL - Power MOSFET
APT8011JLL - Power MOSFET
APT8014JFLL - Power MOSFET
APT8014JLL - Power MOSFET
APT8014L2FLL - Power MOSFET
APT8014L2LL - Power MOSFET

Full PDF Text Transcription

Click to expand full text

APT8075BVFR 800V 12A 0.750Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • Lower Leakage • Faster Switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • 100% Avalanche Tested FREDFET D G S • Popular TO-247 Package All Ratings: TC = 25°C unless otherwise specified. APT8075BVFR UNIT Volts Amps 800 12 48 ±30 ±40 260 2.

Published: Apr 23, 2005 |