Advanced Power Technology APTC60AM18SC
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
FEATURES
●● Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile
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● G1 S1 VBUS 0/VBUS OUT
● Benefits S2 G2
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● Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 143 107 572 ±30 18 833 20 1 1800 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge.