APTC80H29SCT Datasheet | Advanced Power Technology

Features - G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B Q4 - Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated G2 S2 NTC1 0/VBUS NTC2 G4 S4 Parallel Si C Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration .. - - - - G3 S3 G4 S4 OUT2 VBUS 0/VBUS OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile Max ratings 800 15 11 60 ±30 290 156 24 0.5 670 Unit V A V m W W A m J Tc = 25°C Tc = 80°C Tc =...