APTGT100H170 Datasheet | Advanced Power Technology

Features - Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 k Hz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Kelvin emitter for easy drive - Very low stray inductance - Symmetrical design - M5 power connectors - High level of integration Benefits - Stable temperature behavior - Very rugged - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Easy paralleling due to positive TC of VCEsat - Low profile E1 OUT1 OUT2 E3 Q2 G2 Q4 G4 E2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS G2 E2 E3 G3 OUT2 E4 G4 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 200A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be...