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APTGT150DH170 Datasheet PDF

Advanced Power Technology APTGT150DH170

IGBT

Part No. APTGT150DH170
Datasheet APTGT150DH170 Download
Manufacturer
Advanced Power Technology
Description IGBT
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APTGT150DH170 datasheet page 1 preview

FEATURES

● Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
● Kelvin emitter for easy drive
● Very low stray inductance - Symmetrical design - M5 power connectors
● High level of integration Benefits
● Stable temperature behavior
● Very rugged
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Easy paralleling due to positive TC of VCEsat
● Low profile E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS E4 G4 OUT2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 300A @ 1600V These Devices are sensitive to Electrostatic Discharge.
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