Advanced Power Technology APTGT150DU60T
IGBT
FEATURES
● Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated● Kelvin emitter for easy drive
● Very low stray inductance - Symmetrical design - Lead frames for power connections
● High level of integration
● Internal thermistor for temperature monitoring Benefits
● Stable temperature behavior
● Very rugged
● Solderable terminals for easy PCB mounting
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Easy paralleling due to positive TC of VCEsat
● Low profile Max ratings 600 225 150 350 ±20 480 300A @ 550V Unit V A V W G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge.