Advanced Power Technology APTGT300U170D4G
IGBT Power Module
FEATURES
● Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated● Kelvin emitter for easy drive
● Low stray inductance - M6 connectors for power - M4 connectors for signal
● High level of integration 1 1 3 5 2 2 4 5 3 Benefits
● Outstanding performance at high frequency operation
● Stable temperature behavior
● Very rugged
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Easy paralleling due to positive TC of VCEsat
● RoHS Compliant Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1700 530 300 600 ±20 1470 600A@1650V Unit V March, 2006 1-5 APTGT300U170D4G – Rev 1 A V W Reverse Bias Safe Operation Area These Devices are sensitive to Electrostatic Discharge.