Advanced Power Technology APTGT50DA170D1
Power-Module IGBT
| Part No. | APTGT50DA170D1 |
|---|---|
| Datasheet | APTGT50DA170D1 Download |
| Manufacturer |  Advanced Power Technology |
| Description | Power-Module IGBT |
| Buy | Stock & Price |
FEATURES
● Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated● Kelvin emitter for easy drive
● Low stray inductance
● High level of integration
● Kelvin emitter for easy drive
● Low stray inductance - M5 power connectors Benefits
● Stable temperature behavior
● Very rugged
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Easy paralleling due to positive TC of VCEsat 3 Q2 6 7 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website –...
