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APTGT75DSK60T3 Datasheet PDF

Advanced Power Technology APTGT75DSK60T3

Power-Module IGBT

Part No. APTGT75DSK60T3
Datasheet APTGT75DSK60T3 Download
Manufacturer
Advanced Power Technology
Description Power-Module IGBT
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APTGT75DSK60T3 datasheet page 1 preview

FEATURES

● Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
● Kelvin emitter for easy drive
● Very low stray inductance - Symmetrical design
● High level of integration
● Internal thermistor for temperature monitoring Benefits
● Stable temperature behavior
● Very rugged
● Solderable terminals for easy PCB mounting
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Easy paralleling due to positive TC of VCEsat
● Low profile
● Each leg can be easily paralleled to achieve a single buck of twice the current capability. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C These Devices are sensitive to Electrostatic Discharge.
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