Additional preview pages of the APTGU30DDA60T3 datasheet.
Product details
Features
Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 200kHz range - Soft recovery parallel diodes - Low diode VF.
Kelvin emitter for easy drive.
Very low stray inductance - Symmetrical design.
Internal thermistor for temperature monitoring.
High level of integration Benefits.
Outstanding performance at high frequency operation.
Direct m.
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APTGU30DDA60T3 Datasheet
