Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 200kHz range - Soft recovery parallel diodes - Low diode VF.
Kelvin emitter for easy drive.
Very low stray inductance - Symmetrical design - Lead frames for power connections.
High level of integration Benefits.
Outstanding performance at high frequency operation.
Full PDF Text Transcription for APTGU40TDU120P (Reference)
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APTGU40TDU120P. For precise diagrams, and layout, please refer to the original PDF.
APTGU40TDU120P Datasheet
