APTM100AM90F Datasheet | Advanced Power Technology

Features - Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 S2 0/VBUS - - .. G1 S1 - VBUS 0/VBUS OUT Benefits - - - - Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile S2 G2 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. 1- 6 APTM100AM90F- Rev 1 Max ratings 1000 78 59 312 ±30 105 1250 25 50 3000 Unit V A V mΩ W A m J May, 2005 All ratings @ Tj = 25°C unless otherwise specified Symbol IDSS RDS(on) VGS(th) IGSS Electrical Characteristics Characteristic Zero Gate Voltage Drain Current...