APTM100DDA35T3 Datasheet | Advanced Power Technology

Features - Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged - Kelvin source for easy drive - Very low stray inductance - Symmetrical design - Internal thermistor for temperature monitoring - High level of integration Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile - Each leg can be easily paralleled to achieve a single boost of twice the current capability CR1 22 7 CR2 23 Q1 26 8 Q2 4 27 29 15 30 31 R1 32 16 .. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C V mΩ W A m J These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be...